SIHU2N80E-GE3

Product Overview

Use

It is used for power management and switching applications in various electronic devices and systems.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The SIHU2N80E-GE3 is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power control and management in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Voltage Rating: 800V
Current Rating: 2A
On-Resistance: 4.5Ω
Gate Charge: 12nC
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHU2N80E-GE3 has a standard pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

High voltage capability allows for use in diverse applications.
Low on-resistance minimizes power loss and improves efficiency.
Fast switching speed enables rapid power control.

Advantages

Suitable for high voltage applications
Low power dissipation
Enhanced efficiency in power management

Disadvantages

Sensitive to static electricity
Requires careful handling during installation

Working Principles

The SIHU2N80E-GE3 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in a circuit.

Detailed Application Field Plans

This MOSFET is widely used in: - Switch mode power supplies - Motor control systems - LED lighting applications - Solar inverters - Industrial automation

Detailed and Complete Alternative Models

IRF840
STP16NF06L
FQP50N06L
IRL540

In conclusion, the SIHU2N80E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component for efficient power management in various electronic applications.

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