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SI7476DP-T1-GE3
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification of power in electronic circuits - Characteristics: High voltage, low on-resistance, fast switching speed - Package: DPAK (TO-252) - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 2500 units per reel
Specifications: - Voltage Rating: 30V - Current Rating: 20A - On-Resistance: 4.5mΩ - Gate Charge: 18nC - Operating Temperature: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain
Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for improved efficiency - Enhanced thermal performance for reliability - Avalanche energy rated for ruggedness
Advantages: - High efficiency in power management - Reliable performance in various applications - Compact package for space-constrained designs
Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly
Working Principles: The SI7476DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the source and drain terminals.
Detailed Application Field Plans: - DC-DC converters - Motor control - Power supplies - Battery management systems - LED lighting
Detailed and Complete Alternative Models: - SI7469DP-T1-GE3 - SI7488DP-T1-GE3 - SI7455DP-T1-GE3
This comprehensive entry provides a detailed overview of the SI7476DP-T1-GE3 Power MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
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What is the SI7476DP-T1-GE3?
- The SI7476DP-T1-GE3 is a dual P-channel MOSFET designed for use in power management applications.
What are the key features of the SI7476DP-T1-GE3?
- The key features include low on-resistance, high current capability, and a compact package design.
What are the typical applications for the SI7476DP-T1-GE3?
- Typical applications include battery protection, power switches, load switches, and other power management solutions.
What is the maximum drain-source voltage rating for the SI7476DP-T1-GE3?
- The maximum drain-source voltage rating is typically around 20V.
What is the maximum continuous drain current for the SI7476DP-T1-GE3?
- The maximum continuous drain current is typically around 6A.
What is the operating temperature range for the SI7476DP-T1-GE3?
- The operating temperature range is typically between -55°C to 150°C.
Does the SI7476DP-T1-GE3 require any external components for operation?
- It may require external components such as resistors, capacitors, and inductors depending on the specific application.
Is the SI7476DP-T1-GE3 suitable for automotive applications?
- Yes, it is often used in automotive power management systems due to its performance and reliability.
Can the SI7476DP-T1-GE3 be used in high-frequency switching applications?
- Yes, it is capable of being used in high-frequency switching applications due to its fast switching characteristics.
Where can I find detailed technical specifications and application notes for the SI7476DP-T1-GE3?
- Detailed technical specifications and application notes can be found on the manufacturer's website or in the product datasheet.