SI7386DP-T1-E3

Product Overview

Category: Power MOSFET
Use: Switching applications
Characteristics: High efficiency, low on-resistance, small package size
Package: DPAK (TO-252)
Essence: Power management
Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 10A
• RDS(ON): 8.5mΩ at VGS = 10V
• Gate Threshold Voltage: 2.35V
• Total Gate Charge: 15nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI7386DP-T1-E3 features a standard DPAK (TO-252) package with three pins: gate, drain, and source.

Functional Features

• Low on-resistance for high efficiency
• Fast switching speed
• Enhanced power management capabilities

Advantages and Disadvantages

Advantages: - Small package size - High efficiency - Low on-resistance

Disadvantages: - Limited voltage rating compared to some alternatives - Sensitive to static electricity

Working Principles

The SI7386DP-T1-E3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in switching applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - DC-DC converters - Power supplies - Motor control - Load switches

Detailed and Complete Alternative Models

• SI7386DP-T1-GE3: Similar specifications but with a different package (D2PAK)
• SI7386ADP-T1-GE3: Higher voltage rating (60V) with similar characteristics
• SI7386DP-T1-WE3: Lower on-resistance (6.5mΩ) with similar voltage rating

This completes the entry for SI7386DP-T1-E3, providing comprehensive information about the product's category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.