VNB10N07

Basic Information Overview

• Category: Electronic Component
• Use: Power MOSFET
• Characteristics:
  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
• Package: TO-252 (DPAK)
• Essence: Power transistor for various applications
• Packaging/Quantity: Typically sold in reels of 2,500 units

Specifications

• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 10A
• On-Resistance (RDS(on)): 0.1Ω (max)
• Gate Threshold Voltage (VGS(th)): 2.5V (typ)
• Total Gate Charge (Qg): 15nC (typ)
• Input Capacitance (Ciss): 800pF (typ)
• Output Capacitance (Coss): 200pF (typ)
• Reverse Transfer Capacitance (Crss): 150pF (typ)

Detailed Pin Configuration

The VNB10N07 power MOSFET has three pins: 1. Gate (G): Controls the flow of current between the source and drain. 2. Drain (D): Connects to the positive terminal of the load. 3. Source (S): Connects to the negative terminal of the load.

Functional Features

• High voltage capability allows for use in a wide range of applications.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables high-frequency operation.
• Low gate charge reduces switching losses and improves overall performance.

Advantages and Disadvantages

Advantages: - High voltage capability makes it suitable for various applications. - Low on-resistance results in reduced power dissipation. - Fast switching speed allows for efficient operation. - Low gate charge enhances overall performance.

Disadvantages: - Limited current handling capacity compared to higher-rated MOSFETs. - Higher cost compared to lower-rated MOSFETs with similar specifications.

Working Principles

The VNB10N07 operates based on the principle of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). When a positive voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the source and drain. By varying the gate voltage, the MOSFET can be turned on or off, allowing or blocking the current flow.

Detailed Application Field Plans

The VNB10N07 power MOSFET finds applications in various fields, including: 1. Power supplies: Used in switch-mode power supplies for efficient voltage regulation. 2. Motor control: Enables precise control of motor speed and direction in robotics and automation systems. 3. Lighting systems: Suitable for driving high-power LEDs in lighting applications. 4. Audio amplifiers: Used in audio amplification circuits for improved efficiency and performance. 5. Automotive electronics: Finds application in automotive systems such as engine control units and lighting control modules.

Detailed and Complete Alternative Models

1. VNB10N07-E: Similar specifications and package, but with enhanced thermal characteristics.
2. VNB10N07G: Features a smaller package size (TO-263) for space-constrained applications.
3. VNB10N07L: Low voltage version with a reduced drain-source voltage rating of 60V.

(Note: The above alternative models are provided for reference and may have slight variations in specifications.)

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