STW50N65DM2AG

Introduction

The STW50N65DM2AG is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its high efficiency and reliability. This entry provides an overview of the STW50N65DM2AG, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The STW50N65DM2AG is utilized as a switching device in power supply units, motor control, and other high-power applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-frequency applications.
• Package: The STW50N65DM2AG is typically available in a TO-247 package.
• Essence: Its essence lies in providing efficient and reliable power switching capabilities.
• Packaging/Quantity: It is commonly packaged individually and sold in quantities suitable for production or prototyping purposes.

Specifications

• Voltage Rating: 650V
• Current Rating: 50A
• On-State Resistance: 0.036Ω
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-247

Detailed Pin Configuration

The STW50N65DM2AG features a standard pin configuration for a TO-247 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High Efficiency: The MOSFET's low on-state resistance contributes to minimal power dissipation, enhancing overall system efficiency.
• Fast Switching Speed: It offers rapid turn-on and turn-off times, enabling high-frequency operation.
• Low Gate Charge: This feature facilitates precise and responsive control of the MOSFET.

Advantages and Disadvantages

Advantages

• High efficiency
• Fast switching speed
• Low on-state resistance

Disadvantages

• Sensitivity to voltage spikes
• Potential for thermal issues at high currents

Working Principles

The STW50N65DM2AG operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents with minimal power loss.

Detailed Application Field Plans

The STW50N65DM2AG finds extensive use in the following applications: - Switched-mode power supplies - Motor drives - Inverters for renewable energy systems - Electric vehicle powertrains

Detailed and Complete Alternative Models

Some alternative models to the STW50N65DM2AG include: - IRFP4568PbF - FDPF51N25T - IXFN48N65X3

In conclusion, the STW50N65DM2AG is a versatile power MOSFET with exceptional performance characteristics, making it a preferred choice for high-power electronic applications.

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