تصویر ممکن است نشان دهنده باشد.
برای جزئیات محصول به مشخصات مراجعه کنید.
STFI26NM60N

STFI26NM60N

Introduction

STFI26NM60N is a power MOSFET belonging to the semiconductor product category. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor, Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-220, TO-220FP
  • Essence: Efficient power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 26A
  • On-Resistance: 0.19 Ohms
  • Gate Threshold Voltage: 2-4V
  • Operating Temperature: -55°C to 175°C
  • Package Type: TO-220, TO-220FP

Detailed Pin Configuration

The STFI26NM60N features a standard pin configuration for TO-220 and TO-220FP packages, with the gate, drain, and source pins clearly labeled for easy integration into circuit designs.

Functional Features

  • High voltage capability allows for use in various power applications
  • Low on-resistance minimizes power losses and improves efficiency
  • Fast switching speed enables rapid response in switching circuits

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The STFI26NM60N operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device and manage power flow within electronic circuits.

Detailed Application Field Plans

The STFI26NM60N finds extensive use in power supply units, motor control systems, lighting applications, and other power management circuits where efficient power switching and control are essential.

Detailed and Complete Alternative Models

  • STFI30NM60N
  • STFI24NM60N
  • STFI28NM60N
  • STFI22NM60N

In conclusion, the STFI26NM60N power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power switching applications.

[Word Count: 314]

10 سوال و پاسخ رایج مربوط به کاربرد STFI26NM60N در راه حل های فنی را فهرست کنید

  1. What is STFI26NM60N?

    • STFI26NM60N is a power MOSFET designed for high-speed switching applications.
  2. What are the key features of STFI26NM60N?

    • The key features include low on-resistance, fast switching speed, and high ruggedness.
  3. What are the typical applications of STFI26NM60N?

    • Typical applications include power supplies, motor control, and lighting ballasts.
  4. What is the maximum voltage and current rating for STFI26NM60N?

    • The maximum voltage rating is typically 600V, and the maximum current rating is around 26A.
  5. What are the thermal characteristics of STFI26NM60N?

    • The device has low thermal resistance and is designed for efficient heat dissipation.
  6. Does STFI26NM60N require any special gate driving considerations?

    • It is recommended to use proper gate driving techniques to ensure reliable and efficient operation.
  7. Are there any specific layout considerations for using STFI26NM60N in a circuit?

    • Proper PCB layout and thermal management are important for optimizing performance and reliability.
  8. Can STFI26NM60N be used in parallel configurations for higher current applications?

    • Yes, it can be used in parallel configurations with proper attention to current sharing and thermal management.
  9. What are the typical switching frequencies supported by STFI26NM60N?

    • The device can support switching frequencies commonly used in power electronics applications, such as several hundred kHz to a few MHz.
  10. Are there any recommended protection measures when using STFI26NM60N in a circuit?

    • It is advisable to incorporate overcurrent and overvoltage protection to safeguard the MOSFET and the overall circuit from potential damage.