M48Z58Y-70MH1F

Introduction

The M48Z58Y-70MH1F is a non-volatile static RAM (NVSRAM) product designed for applications requiring data retention in the absence of power. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Non-Volatile Static RAM (NVSRAM)
• Use: Data retention in the absence of power
• Characteristics: Non-volatile, high reliability, low power consumption
• Package: 28-pin SOIC (Small Outline Integrated Circuit)
• Essence: Combines the benefits of SRAM and EEPROM
• Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier

Specifications

• Density: 64 Kbit
• Organization: 8K x 8 bit
• Voltage Range: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2.0V minimum
• Standby Current: 200µA maximum
• Automatic Battery Switchover

Detailed Pin Configuration

1. VBAT: Battery input for backup power
2. VSS: Ground
3. NC: No connection
4. NC: No connection
5. A16: Address input
6. A15: Address input
7. A12: Address input
8. A7: Address input
9. A6: Address input
10. A5: Address input
11. A4: Address input
12. A3: Address input
13. A2: Address input
14. A1: Address input
15. A0: Address input
16. DQ0: Data input/output
17. DQ1: Data input/output
18. DQ2: Data input/output
19. DQ3: Data input/output
20. DQ4: Data input/output
21. DQ5: Data input/output
22. DQ6: Data input/output
23. DQ7: Data input/output
24. CE: Chip enable
25. WE: Write enable
26. RESET: Reset
27. VCC: Power supply
28. VSS: Ground

Functional Features

• Non-Volatile Storage: Retains data without power
• High Reliability: Built-in energy source ensures data integrity
• Low Power Consumption: Ideal for battery-powered devices
• Automatic Battery Switchover: Seamless transition between main power and backup power

Advantages and Disadvantages

Advantages

• Reliable data retention
• Low standby current
• Easy integration into existing designs

Disadvantages

• Limited density compared to other non-volatile memory options
• Higher cost compared to traditional SRAM

Working Principles

The M48Z58Y-70MH1F utilizes a combination of volatile and non-volatile memory technologies. When power is applied, the device operates like a standard SRAM, offering fast read and write access. In the absence of power, a built-in energy source ensures that the data is retained, providing non-volatile storage capabilities.

Detailed Application Field Plans

The M48Z58Y-70MH1F is well-suited for applications requiring reliable data retention, such as: - Industrial control systems - Automotive electronics - Medical devices - Networking equipment - Instrumentation and measurement devices

Detailed and Complete Alternative Models

• M48Z02-150PC1: 16 Kbit NVSRAM
• M48Z35Y-70PC1: 32 Kbit NVSRAM
• M48Z12-150PC1: 128 Kbit NVSRAM
• M48Z08-100PC1: 256 Kbit NVSRAM

In conclusion, the M48Z58Y-70MH1F offers a reliable solution for applications requiring non-volatile data storage with the added benefits of low power consumption and high reliability.

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