2SD2150T100R

Product Overview

• Category: Transistor
• Use: Amplification and switching in electronic circuits
• Characteristics: High voltage, high current capability
• Package: TO-220F
• Essence: Power transistor for general-purpose applications
• Packaging/Quantity: Typically sold in reels of 1000 units

Specifications

• Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 1500V
• Current - Collector (Ic) (Max): 8A
• Power - Max: 50W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 4A, 5V
• Frequency - Transition: 4MHz

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed

Advantages

• Suitable for high power applications
• Wide operating frequency range
• Low distortion

Disadvantages

• Higher power dissipation compared to some alternatives
• Sensitive to overvoltage conditions

Working Principles

The 2SD2150T100R operates as a bipolar junction transistor (BJT), where the flow of charge carriers is controlled by the application of a small signal at one of the transistor's three terminals. In this case, it is an NPN transistor, meaning that the majority charge carriers are electrons.

Detailed Application Field Plans

This transistor is commonly used in power supply circuits, audio amplifiers, and high-voltage switching applications due to its high voltage and current capabilities. It is also suitable for use in electronic ballasts and industrial control systems.

Detailed and Complete Alternative Models

• 2SD882
• MJE13005
• TIP31C
• MJL21193

---

This content provides a comprehensive overview of the 2SD2150T100R transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.