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2SB1189T100R
Product Overview
The 2SB1189T100R belongs to the category of bipolar transistors and is commonly used in electronic circuits for amplification and switching applications. This transistor exhibits characteristics such as high current capability, low saturation voltage, and fast switching speed. It is typically packaged in a TO-220 style package and is available in quantities suitable for both individual and industrial use.
Specifications
- Maximum Collector-Base Voltage: 120V
- Maximum Collector Current: 8A
- Power Dissipation: 40W
- Transition Frequency: 30MHz
- Package Type: TO-220
- Quantity: Individual/Industrial
Detailed Pin Configuration
The 2SB1189T100R features a standard TO-220 pin configuration with the collector connected to pin 1, the base to pin 2, and the emitter to pin 3.
Functional Features
This transistor offers high current gain, low noise, and excellent linearity, making it suitable for audio amplifier and power switching applications.
Advantages and Disadvantages
Advantages: - High current capability - Low saturation voltage - Fast switching speed
Disadvantages: - Moderate transition frequency - Relatively large package size
Working Principles
The 2SB1189T100R operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its collector and emitter terminals by varying the voltage applied to the base terminal.
Detailed Application Field Plans
This transistor is commonly used in audio amplifier circuits, power supply units, and motor control systems due to its high current handling capabilities and low saturation voltage.
Detailed and Complete Alternative Models
- 2SB1201T100R
- 2SB1234T100R
- 2SB1267T100R
In conclusion, the 2SB1189T100R is a versatile bipolar transistor that finds application in various electronic circuits requiring high current amplification and switching capabilities.
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What is the maximum collector current of 2SB1189T100R?
- The maximum collector current of 2SB1189T100R is 3A.
What is the maximum collector-emitter voltage of 2SB1189T100R?
- The maximum collector-emitter voltage of 2SB1189T100R is 120V.
What is the power dissipation of 2SB1189T100R?
- The power dissipation of 2SB1189T100R is 1.5W.
What are the typical applications of 2SB1189T100R?
- 2SB1189T100R is commonly used in audio amplification, power management, and general switching applications.
What is the gain (hFE) of 2SB1189T100R?
- The gain (hFE) of 2SB1189T100R typically ranges from 60 to 320.
Is 2SB1189T100R suitable for high-frequency applications?
- No, 2SB1189T100R is not recommended for high-frequency applications due to its lower transition frequency.
What is the package type of 2SB1189T100R?
- 2SB1189T100R comes in a TO-126 package.
Can 2SB1189T100R be used in automotive applications?
- Yes, 2SB1189T100R can be used in automotive electronic systems such as power control modules and audio amplifiers.
Does 2SB1189T100R require a heat sink for certain applications?
- Yes, for high-power applications or when operating at elevated temperatures, a heat sink may be necessary to ensure proper thermal management.
What are the recommended operating conditions for 2SB1189T100R?
- The recommended operating temperature range for 2SB1189T100R is -55°C to 150°C, and it should be operated within its specified voltage and current limits.