FSAT66P5X

Product Overview

Category: Electronic Component
Use: Amplifier Transistor
Characteristics: High power, high frequency
Package: TO-220
Essence: NPN Silicon RF Power Transistor
Packaging/Quantity: Tube/50 pieces

Specifications

• Collector-Emitter Voltage (Vce): 30V
• Collector Current (Ic): 10A
• Power Dissipation (Pd): 150W
• Frequency Range: 1MHz - 2GHz
• Gain: 13dB
• Package Type: TO-220
• Mounting Style: Through Hole
• Operating Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The FSAT66P5X transistor has three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High power handling capability
• Wide frequency range for various applications
• Low noise and distortion
• Excellent linearity
• High gain for signal amplification
• Suitable for RF power amplification in communication systems

Advantages

• High power output
• Wide frequency coverage
• Low noise and distortion
• Good linearity
• Reliable performance
• Easy to mount and use

Disadvantages

• Limited voltage and current ratings
• Requires proper heat sinking for optimal performance
• Relatively higher cost compared to lower power transistors

Working Principles

The FSAT66P5X is an NPN silicon RF power transistor designed for high-frequency amplification. It operates based on the principles of bipolar junction transistors (BJTs). When a small input signal is applied to the base terminal, it controls the larger current flowing between the collector and emitter terminals. This amplification process allows the transistor to boost the power of the input signal.

Detailed Application Field Plans

The FSAT66P5X transistor is commonly used in various applications, including:

1. RF power amplifiers in communication systems
2. Wireless transmitters and receivers
3. Radar systems
4. Broadcast equipment
5. Ham radio amplifiers
6. Industrial and scientific applications requiring high-frequency amplification

Detailed and Complete Alternative Models

1. FSAT66N5X: NPN Silicon RF Power Transistor, TO-220 package, 30V Vce, 10A Ic, 150W Pd, 1MHz - 2GHz frequency range.
2. FSAT66P6X: PNP Silicon RF Power Transistor, TO-220 package, 30V Vce, 10A Ic, 150W Pd, 1MHz - 2GHz frequency range.
3. FSAT66N6X: NPN Silicon RF Power Transistor, TO-220 package, 40V Vce, 8A Ic, 120W Pd, 1MHz - 2GHz frequency range.
4. FSAT66P7X: PNP Silicon RF Power Transistor, TO-220 package, 40V Vce, 8A Ic, 120W Pd, 1MHz - 2GHz frequency range.

These alternative models provide similar characteristics and can be used as substitutes for the FSAT66P5X transistor in various applications.

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