Microsemi Corporation
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JAN2N2920L

JAN2N2920L

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High voltage, low power dissipation, small package size
  • Package: TO-18 metal can package
  • Essence: NPN bipolar junction transistor
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Maximum Collector-Emitter Voltage: 75V
  • Maximum Collector-Base Voltage: 80V
  • Maximum Emitter-Base Voltage: 7V
  • Collector Current - Continuous: 600mA
  • Power Dissipation: 625mW
  • Transition Frequency: 100MHz
  • Operating Temperature: -65°C to 200°C

Detailed Pin Configuration

The JAN2N2920L transistor has three pins: 1. Collector (C): Connects to the positive supply voltage 2. Base (B): Controls the transistor's conductivity 3. Emitter (E): Connects to the ground or negative supply voltage

Functional Features

  • High voltage capability
  • Low leakage current
  • Fast switching speed
  • Small size for space-constrained applications

Advantages and Disadvantages

Advantages

  • Suitable for high voltage applications
  • Low power dissipation
  • Compact package size

Disadvantages

  • Limited maximum collector current compared to some other transistors
  • Relatively lower transition frequency

Working Principles

The JAN2N2920L is an NPN bipolar junction transistor that operates by controlling the flow of current between its collector and emitter terminals using a small current at its base terminal. When a small current is applied to the base, it allows a larger current to flow from the collector to the emitter, effectively amplifying the input signal.

Detailed Application Field Plans

The JAN2N2920L is commonly used in various electronic circuits such as audio amplifiers, signal processing circuits, and voltage regulators. Its high voltage capability makes it suitable for applications where higher voltages are involved, such as in power supplies and motor control circuits.

Detailed and Complete Alternative Models

  • 2N2222: Similar NPN transistor with lower voltage and current ratings
  • BC547: General-purpose NPN transistor with lower voltage and current ratings
  • MPSA42: High voltage NPN transistor with similar characteristics

This completes the entry for JAN2N2920L, providing comprehensive information about its category, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

10 سوال و پاسخ رایج مربوط به کاربرد JAN2N2920L در راه حل های فنی را فهرست کنید

  1. What is the JAN2N2920L transistor used for?

    • The JAN2N2920L is a high-reliability, general-purpose NPN transistor commonly used in military and aerospace applications.

  2. What are the key specifications of the JAN2N2920L transistor?

    • The JAN2N2920L transistor typically has a maximum collector current of 600mA, a maximum power dissipation of 625mW, and a voltage rating of 40V.

  3. Can the JAN2N2920L be used in commercial applications?

    • While the JAN2N2920L is designed for military and aerospace use, it can also be used in certain commercial applications where high reliability and ruggedness are required.

  4. What are some typical circuit configurations using the JAN2N2920L?

    • The JAN2N2920L can be used in common emitter, common base, and common collector configurations for various amplification and switching purposes.

  5. Is the JAN2N2920L suitable for high-temperature environments?

    • Yes, the JAN2N2920L is designed to operate reliably in high-temperature environments and is often used in applications with stringent temperature requirements.

  6. Are there any specific handling or storage considerations for the JAN2N2920L?

    • It is important to follow standard ESD (electrostatic discharge) precautions when handling the JAN2N2920L to prevent damage. Additionally, proper storage conditions should be maintained to ensure long-term reliability.

  7. What are the alternatives to the JAN2N2920L if it is not available?

    • Alternatives to the JAN2N2920L include other high-reliability transistors with similar specifications, such as JAN2N2222A or JAN2N3904.

  8. Can the JAN2N2920L be used in radiation-prone environments?

    • Yes, the JAN2N2920L is designed to withstand radiation exposure and is suitable for use in radiation-prone environments.

  9. What are the typical failure modes of the JAN2N2920L?

    • Common failure modes for the JAN2N2920L include thermal overstress, electrical overstress, and radiation-induced degradation, which are all accounted for in its design for high reliability.

  10. Where can I find detailed application notes for using the JAN2N2920L in technical solutions?

    • Detailed application notes for the JAN2N2920L can be found in the manufacturer's datasheets, technical manuals, and application guides, which provide comprehensive guidance on its usage in technical solutions.