NAND256W3A2BZAXE

Product Overview

• Category: Integrated Circuit (IC)
• Use: Data storage and retrieval
• Characteristics: Non-volatile, high-density, low-power consumption
• Package: Surface Mount Technology (SMT) package
• Essence: NAND flash memory chip
• Packaging/Quantity: Available in reels or trays, quantity varies based on customer requirements

Specifications

• Memory Capacity: 256 gigabits (32 gigabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Read/Write Speed: Up to 100 megabytes per second
• Erase Block Size: 128 kilobytes
• Endurance: Up to 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The NAND256W3A2BZAXE chip has a total of 48 pins. The pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. /CE - Chip Enable
4. CLE - Command Latch Enable
5. ALE - Address Latch Enable
6. RE - Read Enable
7. WE - Write Enable
8. R/B - Ready/Busy status 9-16. IO0-IO7 - Bidirectional data input/output pins 17-24. NC - No Connection 25-32. NC - No Connection 33-40. NC - No Connection 41-48. NC - No Connection

Functional Features

• High-density storage: The NAND256W3A2BZAXE offers a large memory capacity of 256 gigabits, allowing for the storage of vast amounts of data.
• Non-volatile: The chip retains data even when power is disconnected, ensuring data integrity and reliability.
• Low-power consumption: The NAND256W3A2BZAXE operates at low voltage and consumes minimal power, making it suitable for battery-powered devices.
• Fast data transfer: With read/write speeds of up to 100 megabytes per second, the chip enables quick data access and retrieval.
• Durable design: The chip has a high endurance of up to 100,000 program/erase cycles, ensuring long-term reliability.

Advantages and Disadvantages

Advantages: - High storage capacity - Non-volatile memory - Low power consumption - Fast data transfer speed - Durable design

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited write endurance compared to some alternative models

Working Principles

The NAND256W3A2BZAXE utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the chip applies voltages to specific rows and columns, detecting the resulting electrical current to determine the stored information. Writing data involves applying higher voltages to modify the charge on the floating gates.

Detailed Application Field Plans

The NAND256W3A2BZAXE chip finds applications in various fields, including:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
2. Automotive: Integrated into infotainment systems, navigation devices, and advanced driver-assistance systems (ADAS) for storing maps, firmware, and sensor data.
3. Industrial Automation: Employed in industrial control systems, robotics, and IoT devices for data logging and configuration storage.
4. Medical Devices: Utilized in medical imaging equipment, patient monitoring systems, and diagnostic devices for storing patient data and firmware.

Detailed and Complete Alternative Models

1. NAND128W3A2BZAXE: 128 gigabit (16 gigabyte) capacity, similar specifications to NAND256W3A2BZAXE.
2. NAND512W3A2BZAXE: 512 gigabit (64 gigabyte) capacity, similar specifications to NAND256W3A2BZAXE but higher storage capacity.
3. NAND256W3A2BZBXE: Similar to NAND256W3A2BZAXE but with extended temperature range (-40°C to +105°C).

These alternative models offer different storage capacities or temperature ranges while maintaining similar functionality and characteristics to the NAND256W3A2BZAXE chip.

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