MT46V16M16CY-5B XIT:M TR

Product Overview

Category

The MT46V16M16CY-5B XIT:M TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compatible with various electronic devices

Package

The MT46V16M16CY-5B XIT:M TR is typically packaged in a small form factor integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide high-speed data storage and retrieval, making it an essential component in modern electronic devices.

Packaging/Quantity

The MT46V16M16CY-5B XIT:M TR is usually sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16 Meg x 16
• Operating Voltage: 2.5V ± 0.2V
• Speed Grade: -5B
• Package Type: Small Outline Integrated Circuit (SOIC)
• Pin Count: 48
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. WE#
20. CAS#
21. RAS#
22. CS#
23. CKE
24. A0
25. A1
26. A2
27. A3
28. A4
29. A5
30. A6
31. A7
32. A8
33. A9
34. A10
35. A11
36. BA0
37. BA1
38. CLK
39. DQM0
40. DQM1
41. DM0
42. DM1
43. VREF
44. VDD
45. VSS
46. NC
47. NC
48. NC

Functional Features

• High-speed data transfer rate
• Low power consumption
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for maintaining data integrity
• On-die termination (ODT) for improved signal integrity
• Multiple bank architecture for concurrent access

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Compatible with various electronic devices
• Efficient burst mode operation
• Low power consumption

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure

Working Principles

The MT46V16M16CY-5B XIT:M TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which need to be periodically refreshed to maintain their charge. The memory cells are organized into multiple banks, allowing for concurrent access and faster data retrieval.

Detailed Application Field Plans

The MT46V16M16CY-5B XIT:M TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed data access and large storage capacity make it suitable for applications that require quick and efficient data processing.

Detailed and Complete Alternative Models

1. MT46V32M16P-6T IT:G
2. MT47H64M16HR-25E:B
3. MT41K256M16TW-107:P
4. MT48LC8M16A2TG-75:C
5. MT42L128M32D1KL-18 WT:A

These alternative models offer similar functionality and can be considered as alternatives to the MT46V16M16CY-5B XIT:M TR depending on specific requirements and compatibility.

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