MT41K512M8RH-125 M:E

Product Overview

Category

The MT41K512M8RH-125 M:E belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High capacity: The MT41K512M8RH-125 M:E offers a storage capacity of 512 megabits.
• High speed: It operates at a clock frequency of 125 MHz, enabling fast data transfer.
• Low power consumption: This module is designed to minimize power usage, making it energy-efficient.
• Reliable performance: It incorporates advanced error correction techniques to ensure data integrity.

Package

The MT41K512M8RH-125 M:E is packaged in a small outline dual in-line memory module (SODIMM) form factor. This compact design allows for easy installation in space-constrained devices.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage, essential for efficient operation of modern electronic devices.

Packaging/Quantity

Each package of the MT41K512M8RH-125 M:E contains a single memory module.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabits
• Clock Frequency: 125 MHz
• Voltage: 1.5V
• Data Transfer Rate: 10.0 GB/s
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT41K512M8RH-125 M:E follows the standard pin configuration for DDR3 SDRAM modules. It consists of a total of 204 pins, arranged in a specific pattern to facilitate proper connection with the host device.

For a detailed pin configuration diagram, please refer to the product datasheet.

Functional Features

• High-speed data transfer: The MT41K512M8RH-125 M:E is optimized for fast read and write operations, ensuring efficient data handling.
• Error correction: It incorporates error correction code (ECC) functionality to detect and correct memory errors, enhancing data reliability.
• Auto-refresh capability: This module automatically refreshes stored data at regular intervals, preventing data loss due to decay.

Advantages and Disadvantages

Advantages

• High capacity and speed enable smooth multitasking and faster application loading times.
• Low power consumption contributes to energy efficiency and longer battery life in portable devices.
• Error correction capabilities enhance data integrity and system stability.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited compatibility with older systems that do not support DDR3 SDRAM.

Working Principles

The MT41K512M8RH-125 M:E operates based on the principles of DDR3 SDRAM technology. It stores data in a matrix of capacitors, which are charged or discharged to represent binary values. The memory controller sends commands to access specific memory locations and retrieve or store data accordingly.

Detailed Application Field Plans

The MT41K512M8RH-125 M:E finds extensive use in various applications, including: 1. Personal computers and laptops 2. Servers and data centers 3. Gaming consoles 4. Networking equipment 5. Industrial automation systems

Its high-speed and reliable performance make it suitable for demanding tasks such as gaming, multimedia processing, and data-intensive applications.

Detailed and Complete Alternative Models

1. MT41K256M16TW-107 IT:P - 256 Megabit DDR3 SDRAM module with a clock frequency of 107 MHz.
2. MT41K1G8SN-125 IT:E - 1 Gigabit DDR3 SDRAM module with a clock frequency of 125 MHz.
3. MT41K512M16HA-125 IT:P - 512 Megabit DDR3 SDRAM module with a clock frequency of 125 MHz and higher operating temperature range.

These alternative models offer different capacities, clock frequencies, and features to cater to diverse system requirements.

Note: The content provided above is for illustrative purposes only and may not reflect actual product specifications. Please refer to the manufacturer's documentation for accurate information.