MT29F8G16ADBDAH4-IT:D

Product Overview

Category

The MT29F8G16ADBDAH4-IT:D belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F8G16ADBDAH4-IT:D offers a storage capacity of 8 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling efficient read and write operations.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F8G16ADBDAH4-IT:D is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Packaging/Quantity

The MT29F8G16ADBDAH4-IT:D is typically packaged in surface-mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 8 GB
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA or TSOP
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F8G16ADBDAH4-IT:D has a specific pin configuration for proper integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/busy status
9. WP: Write protect
10. CLE: Command latch enable
11. ALE: Address latch enable
12. RP: Reset/power-down

Note: The pin configuration may vary depending on the package type and manufacturer.

Functional Features

• Page Program: The MT29F8G16ADBDAH4-IT:D supports page programming, allowing data to be written in small increments.
• Block Erase: It enables block erase functionality, allowing for efficient erasure of large data blocks.
• Random Access: This NAND flash memory allows random access to data, facilitating quick retrieval and modification.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and error detection/correction.
• Wear Leveling: It implements wear-leveling techniques to distribute write operations evenly across memory cells, prolonging the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor
• RoHS compliant

Disadvantages

• Limited erase/program cycles
• Susceptible to physical damage if mishandled

Working Principles

The MT29F8G16ADBDAH4-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on its floating gate.

During write operations, data is programmed into the memory cells by applying appropriate voltages to the control pins. Reading data involves sensing the voltage levels stored in the memory cells and converting them back into digital information.

Detailed Application Field Plans

The MT29F8G16ADBDAH4-IT:D finds extensive application in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F8G08ABABA: 8 GB NAND flash memory with similar specifications.
2. MT29F16G08CBABA: 16 GB NAND flash memory with higher storage capacity.
3. MT29F32G08CBABA: 32 GB NAND flash memory with even higher storage capacity.

These alternative models offer different storage capacities while maintaining compatibility with the same interface