MT29F8G16ADBDAH4:D

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory
• Packaging/Quantity: Single unit

Specifications

• Model: MT29F8G16ADBDAH4:D
• Capacity: 8 gigabytes (GB)
• Interface: Parallel
• Voltage: 3.3 volts (V)
• Organization: 8 gigabits x 16 bits
• Access Time: 70 nanoseconds (ns)
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT29F8G16ADBDAH4:D has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A18 | Address inputs | | 3 | DQ0-DQ15 | Data inputs/outputs | | 4 | WE# | Write enable control | | 5 | CE# | Chip enable control | | 6 | RE# | Read enable control | | 7 | CLE | Command latch enable | | 8 | ALE | Address latch enable | | 9 | WP# | Write protect control | | 10 | RY/BY# | Ready/busy status output | | 11 | RP# | Reset/power-down control | | 12 | NC | No connection | | 13 | GND | Ground |

Functional Features

• High-speed data transfer
• Reliable data retention
• Low power consumption
• Block erase and program operations
• Error correction code (ECC) support

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read/write speeds
• Non-volatile memory
• Low power consumption

Disadvantages

• Limited endurance (limited number of erase/write cycles)
• Higher cost compared to other memory technologies

Working Principles

The MT29F8G16ADBDAH4:D is based on flash memory technology. It utilizes a grid of floating-gate transistors to store data. The data is stored in cells by trapping electrons in the floating gate, which alters the transistor's conductive properties. This allows for non-volatile storage, meaning the data remains even when power is removed.

Detailed Application Field Plans

The MT29F8G16ADBDAH4:D is commonly used in various electronic devices that require high-capacity data storage, such as: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Embedded systems

Detailed and Complete Alternative Models

• MT29F8G08ABABA
• MT29F8G16ABCBBH3
• MT29F8G16ADBDAH3
• MT29F8G16ADBDAH5

These alternative models offer similar specifications and functionality to the MT29F8G16ADBDAH4:D, providing options for different application requirements.

In conclusion, the MT29F8G16ADBDAH4:D is a high-capacity flash memory device with fast read/write speeds and reliable data retention. It finds applications in various electronic devices that require large data storage capabilities. While it offers advantages such as non-volatility and low power consumption, it also has limitations in terms of endurance and cost.