MT29F8G16ADADAH4-IT:D

Product Overview

Category

MT29F8G16ADADAH4-IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F8G16ADADAH4-IT:D offers a storage capacity of 8 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F8G16ADADAH4-IT:D comes in a compact form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F8G16ADADAH4-IT:D NAND flash memory is typically packaged in a small surface-mount package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Storage Capacity: 8 gigabytes (GB)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F8G16ADADAH4-IT:D NAND flash memory has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy
9. DQ0-DQ7: Data Input/Output

Functional Features

• Page Program: Allows data to be written into the memory in page-sized increments.
• Block Erase: Enables erasing of data in large block sizes for efficient memory management.
• Random Access: Provides random access to any location within the memory, allowing for quick retrieval of data.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Implements wear-leveling techniques to evenly distribute write operations across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern electronic devices.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of memory technologies.
• Susceptible to data loss if not properly managed or protected.

Working Principles

MT29F8G16ADADAH4-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the controller applies voltages to specific cells and measures the resulting electrical current. Writing data involves applying precise voltage levels to program the desired charge on the floating gates. Erasing data is achieved by removing the charge from the floating gates.

Detailed Application Field Plans

MT29F8G16ADADAH4-IT:D finds application in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Detailed and Complete Alternative Models

Some alternative models to MT29F8G16ADADAH4-IT:D NAND flash memory include: - Samsung K9K8G08U0D - Toshiba TH58NVG6D2FLA89 - Micron MT29F8G08ABACAWP

These alternative models offer similar storage capacities and functionalities, providing options for different design requirements.

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