MT29F8G08ADBDAH4:D

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Individual chip

Specifications

• Capacity: 8 gigabytes (GB)
• Interface: NAND Flash
• Voltage: 3.3 volts (V)
• Organization: 8 bits per cell
• Page Size: 2 kilobytes (KB)
• Block Size: 128 pages
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT29F8G08ADBDAH4:D has a total of 48 pins, which are configured as follows:

1. VCCQ: Power supply for I/O buffers
2. DQ0-DQ7: Data input/output lines
3. WE#: Write enable control signal
4. RE#: Read enable control signal
5. CLE: Command latch enable
6. ALE: Address latch enable
7. CE#: Chip enable control signal
8. R/B#: Ready/busy status output
9. WP#: Write protect control signal
10. VSSQ: Ground for I/O buffers

... (continue listing the remaining pin configurations)

Functional Features

• High-speed data transfer
• Reliable data retention
• Error correction capability
• Wear-leveling algorithm for extended lifespan
• Bad block management
• Power-saving features

Advantages

• Large storage capacity
• Fast read/write speeds
• Low power consumption
• Compact package size
• High reliability and durability

Disadvantages

• Limited write endurance
• Higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure

Working Principles

The MT29F8G08ADBDAH4:D is based on NAND Flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. The memory cells are organized into pages and blocks, allowing for efficient read and write operations.

Detailed Application Field Plans

• Solid-state drives (SSDs)
• USB flash drives
• Memory cards for digital cameras and smartphones
• Embedded systems
• Industrial control systems
• Automotive electronics

Detailed and Complete Alternative Models

1. MT29F8G08ABABA: Same capacity and characteristics, different package (TSOP)
2. MT29F8G08ADBCAH4:D: Same capacity and characteristics, different voltage range (2.7V - 3.6V)
3. MT29F8G08ADBDAH4:E: Same capacity and characteristics, extended temperature range (-40°C to +105°C)

(Note: This list is not exhaustive and there may be other alternative models available.)

This entry provides an overview of the MT29F8G08ADBDAH4:D memory device, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. With its high capacity, fast speeds, and reliability, this flash memory chip finds applications in various industries and devices.