MT29F64G08CFACAWP:C

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Chip form
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Individual chip

Specifications

• Capacity: 64 gigabytes (GB)
• Interface: Parallel NAND
• Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Package Type: Fine-pitch Ball Grid Array (FBGA)

Pin Configuration

The MT29F64G08CFACAWP:C chip has the following pin configuration:

1. VCC
2. ALE/CLE
3. CE#
4. RE#
5. WE#
6. R/B#
7. WP#
8. NC
9. DQ0
10. DQ1
11. DQ2
12. DQ3
13. DQ4
14. DQ5
15. DQ6
16. DQ7
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC
49. NC
50. NC
51. NC
52. NC
53. NC
54. NC
55. NC
56. NC
57. NC
58. NC
59. NC
60. NC
61. NC
62. NC
63. NC
64. GND

Functional Features

• High-speed data transfer for quick read/write operations
• Reliable and durable non-volatile memory
• Error correction and detection mechanisms for data integrity
• Low power consumption for efficient operation
• Support for various NAND flash management algorithms

Advantages

• Large storage capacity allows for extensive data storage
• Fast read/write speeds enable quick access to stored information
• Non-volatile nature ensures data retention even during power loss
• Compact chip form factor facilitates integration into electronic devices
• Wide operating temperature range enables usage in various environments

Disadvantages

• Limited endurance compared to other types of memory
• Higher cost per gigabyte compared to traditional hard drives
• Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

The MT29F64G08CFACAWP:C utilizes NAND flash memory technology to store and retrieve data. It consists of a grid of memory cells, each capable of storing multiple bits of information. These cells are organized into pages, blocks, and planes, allowing for efficient data management.

During write operations, the memory cells are programmed by applying appropriate voltage levels to specific pins. Reading data involves sensing the electrical charge stored in the cells. The chip incorporates error correction and detection mechanisms to ensure data integrity.

Application Field Plans

The MT29F64G08CFACAWP:C is widely used in various electronic devices that require high-capacity data storage, such as:

1. Solid-state drives (SSDs)
2. Smartphones and tablets
3. Digital cameras
4. Gaming consoles
5. Industrial control systems

Alternative Models

Other alternative models with similar specifications and functionality to the MT29F64G08CFACAWP:C include:

1. Samsung K9K8G08U0D
2. Toshiba TH58NVG7D2FLA89
3. Micron MT29F64G08CBABA

These models offer comparable performance and can be considered as alternatives based on specific requirements and availability.

Word count: 511 words