Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Bulk packaging, quantity varies
The MT29F32G08AECBBH1-12IT:B has a total of 63 pins. The pin configuration is as follows:
Advantages: - Large storage capacity - Fast access speed - Suitable for various applications - Low power consumption
Disadvantages: - Limited endurance cycles - Higher cost compared to other memory technologies
The MT29F32G08AECBBH1-12IT:B is based on NAND flash memory technology. It stores data in a series of memory cells organized in blocks. The memory cells can be programmed or erased electrically, allowing for non-volatile data storage. The device uses a parallel interface to communicate with the host system, enabling fast data transfer.
The MT29F32G08AECBBH1-12IT:B is widely used in various electronic devices that require high-capacity data storage, such as:
These alternative models offer similar specifications and functionality to the MT29F32G08AECBBH1-12IT:B, providing options for different application requirements.
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What is the MT29F32G08AECBBH1-12IT:B?
What is the storage capacity of the MT29F32G08AECBBH1-12IT:B?
What is the operating voltage range for the MT29F32G08AECBBH1-12IT:B?
What is the interface used by the MT29F32G08AECBBH1-12IT:B?
What is the maximum transfer rate supported by the MT29F32G08AECBBH1-12IT:B?
What is the endurance rating of the MT29F32G08AECBBH1-12IT:B?
What is the temperature range for the MT29F32G08AECBBH1-12IT:B?
Is the MT29F32G08AECBBH1-12IT:B compatible with various operating systems?
What are some common applications of the MT29F32G08AECBBH1-12IT:B?
Where can I purchase the MT29F32G08AECBBH1-12IT:B?