MT29F2G08ABAEAWP-IT:E

Product Overview

Category

MT29F2G08ABAEAWP-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABAEAWP-IT:E offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into different devices.

Package and Quantity

MT29F2G08ABAEAWP-IT:E is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. Each package contains one unit of the NAND flash memory.

Specifications

• Storage Capacity: 2 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 25 megabytes per second (MB/s)
• Erase/Program Cycle Endurance: 100,000 cycles
• Data Retention: Up to 10 years

Pin Configuration

The detailed pin configuration of MT29F2G08ABAEAWP-IT:E is as follows:

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. VCC (Power Supply)
8. GND (Ground)
9. A0-A18 (Address Inputs)
10. DQ0-DQ15 (Data Inputs/Outputs)

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• Page Program Operation: Allows data to be written into the memory in page-sized increments.
• Block Erase Operation: Enables erasing of data in large block sizes, improving efficiency.
• Random Access: Provides the ability to access data stored at any location within the memory.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors during data retrieval.
• Wear-Leveling: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F2G08ABAEAWP-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When reading data, the charge level of each cell is measured to determine the stored value. During writing, the charge level is adjusted to represent the desired data. The memory is divided into pages and blocks, allowing for efficient read, write, and erase operations.

Application Field Plans

MT29F2G08ABAEAWP-IT:E finds extensive application in the following fields:

1. Mobile Devices: Smartphones, tablets, and portable media players.
2. Digital Cameras: For storing high-resolution photos and videos.
3. Solid-State Drives (SSDs): Used as primary storage in laptops and desktop computers.
4. Automotive Electronics: Infotainment systems, navigation devices, and instrument clusters.
5. Industrial Automation: Embedded systems, control units, and data loggers.

Alternative Models

Here are some alternative models that offer similar functionality:

1. MT29F2G16ABAEAWP-IT:E
2. MT29F4G08ABAEAWP-IT:E
3. MT29F8G08ABAEAWP-IT:E
4. MT29F16G08ABAEAWP-IT:E

(Note: The availability of alternative models may vary based on market conditions and product lifecycle.)

In conclusion, MT29F2G08ABAEAWP-IT:E is a NAND flash memory with a high storage capacity, fast data transfer rate, and reliable performance. It