M29W400DT55ZE6F TR

Product Overview

Category

The M29W400DT55ZE6F TR belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile memory: The M29W400DT55ZE6F TR retains stored data even when power is turned off.
• High capacity: This flash memory chip has a capacity of 4 gigabits (512 megabytes).
• Fast read and write speeds: The M29W400DT55ZE6F TR offers high-speed data transfer, enabling quick access to stored information.
• Low power consumption: This chip is designed to consume minimal power during operation.
• Durable and reliable: The M29W400DT55ZE6F TR is built to withstand various environmental conditions and has a long lifespan.

Package

The M29W400DT55ZE6F TR is available in a compact surface-mount package. It is designed to be easily integrated into circuit boards and other electronic systems.

Essence

The essence of the M29W400DT55ZE6F TR lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

This flash memory chip is typically sold in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 20 years
• Erase/Program cycles: Up to 100,000 cycles

Detailed Pin Configuration

The M29W400DT55ZE6F TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. WE#
31. RE#
32. BYTE#
33. RY/BY#
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. VSS
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Erase and program operations: The M29W400DT55ZE6F TR supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Hardware and software protection: This flash memory chip offers various protection mechanisms to prevent unauthorized access or modification of stored data.
• Error correction: The M29W400DT55ZE6F TR incorporates error correction techniques to ensure data integrity and reliability.
• Fast access time: With its high-speed read and write operations, this chip enables efficient data retrieval and storage.

Advantages and Disadvantages

Advantages

• High capacity for storing large amounts of data.
• Fast read and write speeds for quick data access.
• Low power consumption, making it suitable for battery-powered devices.
• Durable and reliable, ensuring data integrity over time.
• Compact form factor for easy integration into electronic systems.

Disadvantages

• Limited erase/program cycles, which may affect the lifespan of the chip.
• Higher cost compared to other types of memory.

Working Principles

The M29W400DT55ZE6F TR utilizes a floating gate transistor technology called NOR flash memory. It stores data by trapping electric charges in the floating gate, which alters the transistor's behavior and represents binary information (0 or 1). The stored data can be accessed and modified through specific electrical signals sent to the chip.

Detailed Application Field Plans

The M29W400DT55ZE6F TR is widely used in various applications, including: - Personal computers and laptops - Mobile phones and smartphones - Tablets and e-readers - Digital cameras and camcorders - Automotive electronics - Industrial control systems