JS28F512P33EF0

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Stores data even when power is turned off
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Capacity: 512 Megabits (64 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V to 3.6V
• Access Time: 70 ns
• Erase/Program Cycles: 100,000 cycles
• Operating Temperature Range: -40°C to +85°C

Pin Configuration (Detailed)

The JS28F512P33EF0 has a total of 48 pins. The pin configuration is as follows:

1. VPP (Programming Voltage)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Input/Output)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RE# (Read Enable)
8. WP# (Write Protect)
9. RY/BY# (Ready/Busy)
10. RESET# (Reset)
11. VCC (Power Supply)
12. GND (Ground)

(Note: This is just a partial list. The complete pin configuration can be found in the product datasheet.)

Functional Features

• High-speed read and write operations
• Reliable data retention
• Low power consumption
• Built-in error correction mechanisms
• Support for multiple erase and program cycles
• Compatibility with various electronic devices

Advantages

• Large storage capacity
• Fast access times
• Wide operating temperature range
• High endurance for erase and program cycles
• Low power consumption

Disadvantages

• Relatively higher cost compared to other memory options
• Limited compatibility with certain older devices
• Requires careful handling to prevent damage

Working Principles

The JS28F512P33EF0 utilizes a floating-gate transistor technology to store data. It uses electrical charges trapped in the floating gate to represent binary information (0s and 1s). The presence or absence of charge determines the stored data. When reading, writing, or erasing data, specific voltage levels are applied to the appropriate pins to manipulate the charge levels in the memory cells.

Detailed Application Field Plans

The JS28F512P33EF0 is commonly used in various electronic devices that require non-volatile storage, such as:

1. Smartphones and tablets
2. Digital cameras
3. Solid-state drives (SSDs)
4. Embedded systems
5. Automotive electronics
6. Industrial control systems

Alternative Models

1. JS28F256P30BFD: 256 Megabit Flash Memory, Parallel Interface
2. JS28F128J3D75: 128 Megabit Flash Memory, Parallel Interface
3. JS28F064M29EWHA: 64 Megabit Flash Memory, Parallel Interface
4. JS28F032M29EWH: 32 Megabit Flash Memory, Parallel Interface

(Note: These are just a few examples. There are several alternative models available from different manufacturers.)

This concludes the encyclopedia entry for JS28F512P33EF0, providing an overview of its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.