Category: Power MOSFET
Use: High-power switching applications
Characteristics: High voltage, low on-resistance, high current capability
Package: TO-263-3
Essence: Power management
Packaging/Quantity: Tape & Reel, 800 units per reel
The IXTA64N10L2 features a standard TO-263-3 pin configuration with the following layout: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High voltage rating - Low on-resistance - High current handling capability
Disadvantages: - Relatively high gate charge - Limited operating temperature range
The IXTA64N10L2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.
The IXTA64N10L2 is suitable for a wide range of high-power switching applications, including: - Motor control systems - Power supplies - Inverters - Industrial automation equipment
Some alternative models to the IXTA64N10L2 include: - IRFP4568PbF - FDPF33N25T - STP80NF55-06
In conclusion, the IXTA64N10L2 Power MOSFET offers high voltage, low on-resistance, and high current capability, making it ideal for various high-power switching applications.
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What is IXTA64N10L2?
What are the key specifications of IXTA64N10L2?
In what technical solutions can IXTA64N10L2 be used?
What are the advantages of using IXTA64N10L2 in technical solutions?
How does IXTA64N10L2 contribute to energy efficiency in technical solutions?
Are there any thermal considerations when using IXTA64N10L2?
Can IXTA64N10L2 be used in automotive applications?
What protection features does IXTA64N10L2 offer for circuit safety?
What are the typical operating conditions for IXTA64N10L2?
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