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IXFH36N55Q: Product Overview and Specifications
Introduction
The IXFH36N55Q is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and functional features.
Basic Information Overview
- Category: Power MOSFET
- Use: Used for power switching applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-247
- Essence: Efficient power management
- Packaging/Quantity: Typically sold individually or in reels
Specifications
- Voltage Rating: 550V
- Current Rating: 36A
- On-Resistance: 0.09 ohms
- Gate Charge: 60nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IXFH36N55Q follows the standard pin configuration for a TO-247 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High voltage capability allows for use in diverse applications
- Low on-resistance minimizes power losses
- Fast switching speed enables efficient power control
Advantages and Disadvantages
Advantages
- High voltage rating suitable for demanding applications
- Low on-resistance leads to improved efficiency
- Fast switching speed enhances performance
Disadvantages
- Higher gate charge compared to some alternative models
- Operating temperature range may limit extreme environment usage
Working Principles
The IXFH36N55Q operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the device. When a sufficient gate voltage is applied, the device switches on, allowing current to flow between the drain and source terminals.
Detailed Application Field Plans
The IXFH36N55Q finds extensive use in the following application fields: - Switch-mode power supplies - Motor drives - Inverters - Industrial automation systems
Detailed and Complete Alternative Models
Some alternative models to the IXFH36N55Q include: - IRFP4668PbF - FDPF36N60NZ - STW36N60DM2
In conclusion, the IXFH36N55Q power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it a versatile choice for various power switching applications.
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What is IXFH36N55Q?
- IXFH36N55Q is a high-performance, low-loss, 36A, 550V MOSFET designed for various technical solutions.
What are the key features of IXFH36N55Q?
- The key features include low on-state resistance, fast switching speed, high current capability, and ruggedness.
In what technical applications can IXFH36N55Q be used?
- IXFH36N55Q is commonly used in power supplies, motor control, inverters, and other high-power applications.
What is the maximum voltage rating of IXFH36N55Q?
- The maximum voltage rating of IXFH36N55Q is 550V.
What is the typical on-state resistance of IXFH36N55Q?
- The typical on-state resistance of IXFH36N55Q is 0.09 ohms.
What is the maximum continuous drain current of IXFH36N55Q?
- The maximum continuous drain current of IXFH36N55Q is 36A.
Does IXFH36N55Q require a heat sink for operation?
- Yes, IXFH36N55Q may require a heat sink depending on the specific application and power dissipation requirements.
Is IXFH36N55Q suitable for high-frequency switching applications?
- Yes, IXFH36N55Q is suitable for high-frequency switching due to its fast switching speed.
What are the recommended operating conditions for IXFH36N55Q?
- The recommended operating conditions include a specified gate-source voltage, drain current, and temperature range.
Are there any application notes or reference designs available for using IXFH36N55Q?
- Yes, application notes and reference designs are available from the manufacturer to assist with the implementation of IXFH36N55Q in technical solutions.