تصویر ممکن است نشان دهنده باشد.
برای جزئیات محصول به مشخصات مراجعه کنید.
IXFE44N50QD2

IXFE44N50QD2

Product Overview

Category

The IXFE44N50QD2 belongs to the category of power MOSFETs.

Use

It is used for high-power applications such as in power supplies, motor control, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXFE44N50QD2 is typically available in a TO-220 package.

Essence

The essence of the IXFE44N50QD2 lies in its ability to handle high power with low losses.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 500V
  • Current Rating: 44A
  • On-Resistance: 0.19Ω
  • Gate Charge: 70nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The IXFE44N50QD2 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful handling due to high voltage ratings

Working Principles

The IXFE44N50QD2 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXFE44N50QD2 is well-suited for use in the following applications: - Power supplies - Motor control systems - Inverters for renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFE44N50QD2 include: - IRFP4668PbF - FDPF44N25T - STW44NM60ND

In conclusion, the IXFE44N50QD2 is a high-voltage power MOSFET with excellent characteristics suitable for various high-power applications. Its performance, along with carefully planned application field plans, makes it a valuable component in power electronics.

[Word Count: 366]