IXBF14N250

Basic Information Overview

• Category: Electronic Component
• Use: Power Transistor
• Characteristics: High Voltage, High Current, NPN Bipolar Junction Transistor
• Package: TO-220
• Essence: Amplification and Switching of Electrical Signals
• Packaging/Quantity: Individual Units

Specifications

• Maximum Collector-Emitter Voltage (Vce): 250V
• Maximum Collector Current (Ic): 14A
• Maximum Power Dissipation (Pd): 150W
• DC Current Gain (hFE): 25 - 1000
• Transition Frequency (ft): 4MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The IXBF14N250 transistor has three pins: 1. Base (B): Controls the transistor's operation. 2. Emitter (E): Serves as the reference point for current flow. 3. Collector (C): Collects the current flowing through the transistor.

Functional Features

• High voltage capability allows for use in various power applications.
• High current handling capacity makes it suitable for switching heavy loads.
• NPN bipolar junction transistor configuration enables amplification of electrical signals.
• Low saturation voltage ensures efficient switching performance.
• Fast switching speed enhances overall system response time.

Advantages

• Robust construction ensures reliability and durability.
• Wide operating temperature range allows for use in extreme environments.
• Versatile application possibilities due to high voltage and current ratings.
• Suitable for both audio and power amplifier circuits.
• Cost-effective solution for medium-power applications.

Disadvantages

• Relatively large package size may limit its use in space-constrained designs.
• Limited frequency response compared to specialized high-frequency transistors.
• Requires proper heat sinking to prevent overheating at high power levels.
• Sensitivity to electrostatic discharge (ESD) requires careful handling during installation.

Working Principles

The IXBF14N250 operates based on the principles of bipolar junction transistors. When a small current is applied to the base terminal, it controls the flow of a larger current between the collector and emitter terminals. This amplification effect allows the transistor to function as a switch or an amplifier in electronic circuits.

Detailed Application Field Plans

• Power supply units: The IXBF14N250 can be used in power supply circuits to regulate voltage and current.
• Motor control: It is suitable for controlling motors in various applications, such as robotics and industrial automation.
• Audio amplifiers: The transistor's high current capability makes it ideal for audio amplification in stereo systems and musical instruments.
• Lighting systems: It can be employed in lighting circuits to drive high-power LEDs or control brightness levels.

Detailed and Complete Alternative Models

• IXBF10N300: Similar specifications but with a lower maximum collector current (10A).
• IXBF20N200: Higher maximum collector current (20A) but with a lower maximum voltage rating (200V).
• IXBF25N150: Increased maximum voltage rating (250V) and higher collector current (25A).

Note: These alternative models are provided as examples and may not cover all available options.

This entry provides comprehensive information about the IXBF14N250 power transistor, including its basic overview, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.