IS62WV5128EALL-55TLI-TR

Product Overview

Category

IS62WV5128EALL-55TLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS62WV5128EALL-55TLI-TR comes in a small form factor package suitable for surface mount technology (SMT) applications.

Essence

The essence of IS62WV5128EALL-55TLI-TR lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of several hundred or thousand units per package.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 kilobits (64 kilobytes)
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Interface: Parallel
• Organization: 32K words x 16 bits
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. Vcc (Power Supply)
2. GND (Ground)
3. A0-A14 (Address Inputs)
4. DQ0-DQ15 (Data Inputs/Outputs)
5. WE (Write Enable)
6. OE (Output Enable)
7. CE (Chip Enable)
8. UB/LB (Upper Byte/Lower Byte Control)
9. NC (No Connection)

Functional Features

• High-speed read and write operations
• Easy interfacing with microcontrollers and other digital devices
• Low power consumption in standby mode
• Non-volatile storage of data even when power is removed
• Reliable performance in harsh operating conditions

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data processing
• Low power consumption helps extend battery life in portable devices
• Non-volatile memory ensures data integrity during power cycles
• Reliable performance in extreme temperatures and environmental conditions

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to some alternative memory solutions
• Requires additional circuitry for interfacing with microcontrollers

Working Principles

IS62WV5128EALL-55TLI-TR utilizes static random access memory technology, which stores each bit of data in a flip-flop circuit. This allows for fast read and write operations without the need for periodic refreshing. The memory cells are organized into an array, with each cell being accessed by a unique address. When data is written, it is stored in the corresponding memory cell, and when data is read, it is retrieved from the desired memory location.

Detailed Application Field Plans

IS62WV5128EALL-55TLI-TR finds applications in various electronic devices and systems, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Mobile phones and tablets 5. Automotive electronics 6. Industrial control systems 7. Medical equipment 8. Consumer electronics

Detailed and Complete Alternative Models

1. IS62WV25616BLL-55BLI-TR
2. IS62WV12816BLL-55BLI-TR
3. IS62WV5128BLL-55BLI-TR
4. IS62WV102416BLL-55BLI-TR
5. IS62WV204816BLL-55BLI-TR

These alternative models offer similar specifications and functionality to IS62WV5128EALL-55TLI-TR, providing options for different memory capacity requirements.

In conclusion, IS62WV5128EALL-55TLI-TR is a high-speed, low-power static random access memory product with a capacity of 512 kilobits. It offers reliable performance and non-volatile storage, making it suitable for various applications in the electronics industry.