IS61WV102416FBLL-10T2LI

Product Overview

Category

IS61WV102416FBLL-10T2LI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV102416FBLL-10T2LI is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of IS61WV102416FBLL-10T2LI lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of IS61WV102416FBLL-10T2LI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: IS61WV102416FBLL-10T2LI
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Package Type: Fine Ball Grid Array (FBGA)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV102416FBLL-10T2LI is as follows:

1. Vcc
2. A0-A19
3. DQ0-DQ15
4. WE#
5. OE#
6. CE#

(Note: This is a simplified representation. Please refer to the datasheet for the complete pin configuration.)

Functional Features

• High-speed data access
• Non-volatile storage
• Low power consumption in standby mode
• Easy integration with various electronic systems
• Reliable operation in harsh environments

Advantages and Disadvantages

Advantages

• Fast data access time
• Low power consumption
• Compact package size
• Wide temperature range operation
• Suitable for various applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to some newer memory types

Working Principles

IS61WV102416FBLL-10T2LI operates based on the principles of static random access memory (SRAM). It stores digital information using a network of flip-flops, which retain their state as long as power is supplied. The stored data can be accessed and modified at high speeds.

Detailed Application Field Plans

IS61WV102416FBLL-10T2LI finds applications in various fields, including: 1. Computer systems 2. Networking equipment 3. Telecommunications devices 4. Industrial automation 5. Automotive electronics 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV102416FBLL-10T2LI include: 1. MT48LC16M16A2P-75IT: 16Mb x 16-bit SRAM, 3.3V, 10 ns access time. 2. AS6C1008-55SIN: 1Mb x 8-bit SRAM, 5V, 55 ns access time. 3. CY62128ELL-45ZXI: 128Kb x 8-bit SRAM, 2.7V-3.6V, 45 ns access time.

(Note: This list is not exhaustive. There are several other alternative models available in the market.)

In conclusion, IS61WV102416FBLL-10T2LI is a high-speed, low-power semiconductor memory device primarily used for data storage and retrieval. It offers reliable performance, compact packaging, and wide temperature range operation. While it has advantages such as fast access time and low power consumption, it also has limitations in terms of cost and storage capacity. Nonetheless, it finds applications in various fields and has alternative models with similar functionality.