IS42S32800D-6BI-TR

Product Overview

Category

IS42S32800D-6BI-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Wide operating temperature range

Package

IS42S32800D-6BI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S32800D-6BI-TR lies in its ability to provide fast and reliable data storage and retrieval in various electronic devices.

Packaging/Quantity

This product is typically packaged in reels and is available in large quantities to meet the demands of manufacturers.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 8M words x 32 bits x 4 banks
• Supply Voltage: 2.5V - 3.3V
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS42S32800D-6BI-TR has a total of 86 pins. The pin configuration is as follows:

1. VDD
2. VDDQ
3. DQ0
4. DQ1
5. DQ2
6. DQ3
7. DQ4
8. DQ5
9. DQ6
10. DQ7
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. A16
36. A17
37. A18
38. A19
39. A20
40. A21
41. A22
42. A23
43. A24
44. A25
45. A26
46. A27
47. A28
48. A29
49. A30
50. A31
51. BA0
52. BA1
53. RAS#
54. CAS#
55. WE#
56. CKE
57. CS#
58. DM0
59. DM1
60. VREF
61. CLK
62. ODT0
63. ODT1
64. NC
65. VSS
66. VSSQ
67. DQS0
68. DQS1
69. DQS2
70. DQS3
71. DQS4
72. DQS5
73. DQS6
74. DQS7
75. DQM0
76. DQM1
77. DQM2
78. DQM3
79. DQM4
80. DQM5
81. DQM6
82. DQM7
83. VSS
84. VSSQ
85. NC
86. VDD

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Multiplexed address and data bus for reduced pin count

Advantages

• High-speed data access enables faster application performance
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for space-efficient integration
• Wide operating temperature range ensures reliable operation in various environments

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to non-volatile memory types
• Requires continuous power supply to retain stored data

Working Principles

IS42S32800D-6BI-TR operates based on the principles of synchronous dynamic random access memory. It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The data is accessed by sending specific addresses to the memory controller, which activates the corresponding row and column lines to read or