IS42S32800B-6TLI

Product Overview

Category

IS42S32800B-6TLI belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Package

IS42S32800B-6TLI is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S32800B-6TLI lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of IS42S32800B-6TLI chips.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Density: 256 Megabits (32 Megabytes)
• Organization: 8M words x 32 bits x 4 banks
• Operating Voltage: 2.5V - 3.3V
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Interface: Parallel
• Package Type: TSOP II

Detailed Pin Configuration

The IS42S32800B-6TLI chip has a total of 86 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. /CAS
53. /RAS
54. /WE
55. /CS0
56. /CS1
57. /CS2
58. /CS3
59. /CKE
60. /CLK
61. /DQM0
62. /DQM1
63. /DQM2
64. /DQM3
65. /BA0
66. /BA1
67. /A10
68. /A11
69. /A12
70. /A13
71. /A14
72. /A15
73. /A16
74. /A17
75. /A18
76. /A19
77. /A20
78. /A21
79. /A22
80. /A23
81. /A24
82. /A25
83. VSS
84. VDD
85. VDDQ
86. VSSQ

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Multiplexed address and data bus for efficient communication

Advantages and Disadvantages

Advantages

• High-speed data access
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternative models

Working Principles

IS42S32800B-6TLI operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending specific commands and addresses to the chip, which activates the corresponding row and column of capacitors to read or write data