IS42S32800B-6B-TR

Product Overview

Category

IS42S32800B-6B-TR belongs to the category of dynamic random-access memory (DRAM) products.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S32800B-6B-TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32800B-6B-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 8 Meg x 32
• Speed: 166 MHz
• Voltage: 3.3V
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32800B-6B-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. CS#
15. A0
16. A1
17. A2
18. A3
19. A4
20. A5
21. A6
22. A7
23. A8
24. A9
25. A10
26. A11
27. A12
28. A13
29. A14
30. A15
31. A16
32. A17
33. A18
34. A19
35. A20
36. A21
37. A22
38. A23
39. VDDQ
40. DQ8
41. DQ9
42. DQ10
43. DQ11
44. DQ12
45. DQ13
46. DQ14
47. DQ15
48. VSSQ
49. CLK
50. CKE
51. ODT
52. NC
53. BA0
54. BA1
55. VREF

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• High-speed data access enables faster application performance
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps in extending battery life in portable devices
• Compact package size facilitates integration into space-constrained designs

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to non-volatile memory types
• Requires continuous power supply to retain stored data

Working Principles

IS42S32800B-6B-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in cells that consist of capacitors and transistors. The capacitors hold charge representing binary values, and the transistors control the flow of data in and out of the cells. The synchronous nature of the memory ensures that data is accessed and transferred in synchronization with a clock signal.

Detailed Application Field Plans

IS42S32800B-6B-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S32800B-6B-TR include: - MT48LC32M8A2P-75:G - K4S561632H-UC75 - HYB25D256800CE-5

These models offer similar specifications and functionality, providing customers with options based on their specific requirements.

In conclusion, IS42S32800B-6B-TR is a high-speed, low-power, and compact DRAM product used in various electronic devices for efficient data storage and retrieval. Its functional features, advantages, and disadvantages make it suitable for a wide range of applications. Additionally, alternative models provide flexibility for