IS42S32160A-75BI-TR

Product Overview

Category

IS42S32160A-75BI-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S32160A-75BI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S32160A-75BI-TR lies in its ability to provide fast and efficient data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

This product is typically packaged in reels and is available in varying quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Organization: 32M words x 16 bits
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 133 MHz
• Access Time: 7.5 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /BA0
42. /BA1
43. CLK
44. CKE
45. /CKE
46. /LDQM
47. UDQM
48. /RESET

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Multiple chip select options for flexible memory expansion

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity allows for the storage of extensive amounts of data.
• Low power consumption helps to prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.

Disadvantages

• Sensitive to electrical noise, requiring careful PCB layout and signal routing.
• Relatively higher cost compared to other types of memory technologies.
• Limited scalability beyond a certain capacity due to physical constraints.

Working Principles

IS42S32160A-75BI-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information is accessed by sending specific commands and addresses to the memory module, allowing for read and write operations.

Detailed Application Field Plans

IS42S32160A-75BI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. IS42S16320D-7TLI
2. MT48LC32M16A2P-75IT
3. K4S561632H-UC75

These alternative models offer similar specifications and functionality to IS42S32160A-75BI-TR and can be considered as alternatives based on specific requirements.

In conclusion, IS42S32160A-75BI-TR is a high-speed, large-capacity synchronous DRAM product used for data storage and retrieval in electronic devices. Its compact package size, low power consumption, and efficient functionality make it suitable for various applications. However, careful consideration should be given to electrical noise, cost, and scalability limitations.