IS42S16160J-6TLI

Product Overview

Category

IS42S16160J-6TLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS42S16160J-6TLI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16160J-6TLI lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

IS42S16160J-6TLI is typically packaged in trays or reels, with each containing a specific quantity of modules. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 6
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Parallel
• Clock Frequency: Up to 166 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160J-6TLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VDD
48. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• On-chip address and control circuitry
• Auto-refresh and self-refresh modes for efficient power management
• Easy integration with various electronic devices
• Error correction capabilities

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Large storage capacity
• Compact form factor
• Reliable performance
• Suitable for a wide range of electronic devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond certain storage capacities

Working Principles

IS42S16160J-6TLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The memory controller sends commands and addresses to access specific data stored in the memory cells. The data is read or written by activating the appropriate row and column addresses.

Detailed Application Field Plans

IS42S16160J-6TLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS42S16160J-6TLI include: - MT48LC16M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S256160FE-7.5: Infineon Technologies AG - M12L16161A-6T: Alliance Memory Inc. - AS4C16M16SA-6TCN: Alliance Semiconductor Corporation

These alternative models offer similar specifications and functionality, providing options for different design requirements and sourcing considerations.

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