IR2110STR

Product Overview

Category: Integrated Circuit (IC)

Use: The IR2110STR is a high voltage, high-speed power MOSFET and IGBT driver IC. It is specifically designed for driving large capacitive loads with high peak currents.

Characteristics: - High voltage capability (up to 600V) - High output current (up to 2A) - Fast switching speed - Low propagation delay - Wide operating temperature range (-40°C to +125°C)

Package: SOIC-16

Essence: The IR2110STR is an essential component in power electronics applications where efficient and reliable switching of high-power devices is required.

Packaging/Quantity: The IR2110STR is typically sold in reels containing 250 units.

Specifications

• Supply Voltage: 10V to 20V
• Output Current: 2A (peak)
• Input Logic Levels: CMOS/TTL compatible
• Propagation Delay: 120ns (typical)
• Operating Temperature Range: -40°C to +125°C

Pin Configuration

The IR2110STR features a 16-pin Small Outline Integrated Circuit (SOIC) package. The pin configuration is as follows:

1. VCC - Power supply voltage input
2. VB - Bootstrap supply voltage input
3. HO - High-side gate drive output
4. LO - Low-side gate drive output
5. VS - High-side floating supply return
6. COM - Common connection for low-side and logic ground
7. SD - Shutdown input
8. IN - Logic input
9. RT - Deadtime control resistor
10. CT - Oscillator timing capacitor
11. VS - High-side floating supply return
12. LO - Low-side gate drive output
13. HO - High-side gate drive output
14. VB - Bootstrap supply voltage input
15. VCC - Power supply voltage input
16. NC - No connection

Functional Features

The IR2110STR offers the following functional features:

• High voltage level shifting
• Undervoltage lockout protection
• Overcurrent shutdown protection
• Shoot-through current prevention
• Adjustable deadtime control
• Integrated bootstrap diode

Advantages and Disadvantages

Advantages: - High voltage capability allows driving of large capacitive loads - Fast switching speed enables efficient power conversion - Integrated bootstrap diode simplifies circuit design - Undervoltage lockout protection enhances system reliability

Disadvantages: - Limited output current may not be suitable for extremely high-power applications - Requires external components for proper operation - Relatively high propagation delay compared to some alternative models

Working Principles

The IR2110STR operates by receiving logic-level inputs and generating high-voltage gate drive signals for power MOSFETs or IGBTs. It utilizes a bootstrap technique to provide the necessary voltage levels for driving the high-side switch.

When an input signal is received, the IR2110STR amplifies it and generates complementary gate drive signals for the high-side and low-side switches. This ensures proper switching of the power devices, preventing shoot-through currents and maximizing efficiency.

Application Field Plans

The IR2110STR finds extensive use in various power electronics applications, including: - Motor drives - Switch-mode power supplies - Inverters - Uninterruptible Power Supplies (UPS) - Solar inverters - Electric vehicle charging systems

Alternative Models

For those seeking alternatives to the IR2110STR, the following models offer similar functionality: - IR2104 - IRS21844 - TC4427 - HIP4081A

These alternative models can be considered based on specific application requirements and availability.

In conclusion, the IR2110STR is a high voltage, high-speed power MOSFET and IGBT driver IC. Its characteristics, pin configuration, functional features, advantages, and disadvantages make it suitable for various power electronics applications.