C3D04060F Product Overview

Introduction

The C3D04060F is a high-performance silicon carbide Schottky diode designed for various power electronics applications. This entry provides a comprehensive overview of the C3D04060F, including its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power Electronics Component
• Use: Rectification and Power Conversion
• Characteristics: High Efficiency, Low Forward Voltage Drop, Fast Switching Speed
• Package: TO-252-2 (DPAK)
• Essence: Silicon Carbide Schottky Diode
• Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

• Voltage Rating: 600V
• Current Rating: 4A
• Forward Voltage Drop: 1.35V @ 4A
• Reverse Recovery Time: <15ns
• Operating Temperature Range: -55°C to 175°C
• Storage Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The C3D04060F follows the standard pin configuration for a TO-252-2 package: 1. Anode (A) 2. Cathode (K)

Functional Features

• Ultra-Fast Recovery
• High Frequency Operation
• High Thermal Conductivity
• Low Power Losses

Advantages and Disadvantages

Advantages

• Superior Efficiency
• Reduced Heat Dissipation
• Enhanced System Reliability
• Compact Design

Disadvantages

• Higher Cost Compared to Conventional Diodes
• Sensitivity to Voltage Spikes

Working Principles

The C3D04060F utilizes silicon carbide technology to achieve low forward voltage drop and fast switching characteristics. When forward-biased, the diode allows current flow with minimal voltage loss, making it ideal for high-efficiency power conversion applications.

Detailed Application Field Plans

The C3D04060F is suitable for a wide range of applications, including: - Switch Mode Power Supplies - Solar Inverters - Motor Drives - Electric Vehicle Charging Systems - Induction Heating

Detailed and Complete Alternative Models

• C3D02060F: 200V, 2A Silicon Carbide Schottky Diode
• C3D06060G: 600V, 6A Silicon Carbide Schottky Diode
• C3D10060A: 1000V, 10A Silicon Carbide Schottky Diode

In summary, the C3D04060F offers high-performance characteristics and is well-suited for demanding power electronics applications, providing efficient and reliable operation in various scenarios.

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