AS4C16M16MSA-6BINTR

Product Overview

Category

AS4C16M16MSA-6BINTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and accessing data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Volatile memory
• Requires periodic refreshing

Package

AS4C16M16MSA-6BINTR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C16M16MSA-6BINTR lies in its ability to provide fast and reliable data storage and retrieval in various electronic applications.

Packaging/Quantity

This product is typically packaged individually and is available in different quantities depending on the manufacturer's specifications.

Specifications

• Part Number: AS4C16M16MSA-6BINTR
• Memory Type: DDR3 SDRAM
• Capacity: 256 Megabytes (MB)
• Organization: 16 Meg x 16
• Speed: 667 Megahertz (MHz)
• Voltage: 1.5 Volts (V)
• Latency: CL6
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AS4C16M16MSA-6BINTR module has a total of 200 pins arranged in a specific configuration. The pinout diagram is as follows:

[Insert detailed pin configuration diagram here]

Functional Features

• High-speed data transfer rate
• Low power consumption
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh capabilities
• Burst mode operation for efficient data transfer

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact form factor (SODIMM)
• Suitable for various electronic applications

Disadvantages

• Volatile memory requires periodic refreshing
• Relatively higher cost compared to other memory technologies
• Limited compatibility with older systems

Working Principles

AS4C16M16MSA-6BINTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are organized in a matrix. To read or write data, the module activates specific rows and columns, allowing the charge stored in the capacitors to be sensed or modified.

Detailed Application Field Plans

AS4C16M16MSA-6BINTR is widely used in various electronic devices and computer systems, including but not limited to: - Laptops and notebooks - Desktop computers - Servers - Gaming consoles - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

• AS4C16M16D3B-12BCN: DDR3 SDRAM, 256MB, 16 Meg x 16, 1200MHz, CL12
• AS4C16M16D3B-15BCN: DDR3 SDRAM, 256MB, 16 Meg x 16, 1500MHz, CL15
• AS4C16M16D3B-18BCN: DDR3 SDRAM, 256MB, 16 Meg x 16, 1800MHz, CL18

These alternative models offer similar specifications and can be considered as alternatives to AS4C16M16MSA-6BINTR depending on specific requirements and compatibility.

Note: The content provided above is a sample entry and may not reflect actual product details.